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AP130N20MP TO-247-3 N溝道MOS場效應(yīng)管永源微

The AP130N20P is silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency

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The AP130N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency

訂購信息

ordering information

器件類目

產(chǎn)品型號

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

N溝道

AP130N20MP

TO-247-3

-55~+150 oC

是

功率放大器、電機驅(qū)動裝置

AP130N20MP

示意圖

Sketch Map

resource/images/4569c5dbec8946f8b8b9665f71f1e7a9_52.jpg

產(chǎn)品特性

Product characteristics

VDS =200V,ID =130A

RDS(ON) <23mΩ@ VGS=10V

應(yīng)用范圍

Scope of application

: UPS電源

: 手機充電器

: 電源適配器

: 多端口墻壁充電器

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云倉現(xiàn)貨，快速配送

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品類齊全，性能優(yōu)良

: 省

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技術(shù)團隊

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技術(shù)團隊

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Tongsheng warehouse

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Honorary qualification

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