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AP25G04GD TO-252-4L N+P溝道場(chǎng)效應(yīng)管MOSFET永源微

The AP25G04GD uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.

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產(chǎn)品介紹

Product index

The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

訂購(gòu)信息

ordering information

器件類(lèi)目

產(chǎn)品型號(hào)

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

N+P

AP25G04GD

TO-252-4L

-55 to 150 ℃

是

提升驅(qū)動(dòng)程序、無(wú)電刷電動(dòng)機(jī)

AP25G04GD

示意圖

Sketch Map

resource/images/98aa013f62674404842ce3144b41a64c_20.jpg

產(chǎn)品特性

Product characteristics

VDS = 40V ID =28 A
RDS(ON) < 24mΩ @ VGS=10V （Type：18mΩ）

VDS = -40V ID =25A
RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ）

應(yīng)用范圍

Scope of application

: 車(chē)充

: 滑板車(chē)

: 打火機(jī)

: 剃須刀

公司優(yōu)勢(shì)

Company advantage

: 正

原裝現(xiàn)貨，技術(shù)選型

: 快

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: 全

品類(lèi)齊全，性能優(yōu)良

: 省

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Tongsheng warehouse

通盛倉(cāng)庫(kù)

榮譽(yù)資質(zhì)

Honorary qualification

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