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AP50G03GD TO-252-4L N+P溝道場效應管MOSFET永源微

AP50G03GD TO-252-4L N+P溝道場效應管MOSFET永源微

AP50G03GD TO-252-4L N+P溝道場效應管MOSFET永源微

The AP50G03GD uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.
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通盛 產(chǎn)品介紹

Product index

The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 訂購信息

ordering information
器件類目

產(chǎn)品型號

封裝

環(huán)境溫度

是否在產(chǎn)

應 用 絲 印
N+P AP50G03GD

TO-252-4L

-55 to 150 ℃

無刷直流電機

AP50G03GD

通盛示意圖

Sketch Map  

resource/images/98aa013f62674404842ce3144b41a64c_26.jpg

通盛 產(chǎn)品特性

Product characteristics
VDS = 30V ID =52A
RDS(ON) < 10mΩ @ VGS=10V             (Type:7.2mΩ) 
VDS = -30V ID =-48A
RDS(ON) < 13mΩ @ VGS=-10V           (Type:8.8mΩ)

通盛 應用范圍

Scope of application

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Company advantage
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Tongsheng warehouse

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Honorary qualification

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