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AP5N50BD TO-252-3L N溝道場(chǎng)效應(yīng)管MOSFET永源微

The AP5N50BD is silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency.

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The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

訂購(gòu)信息

ordering information

器件類目

產(chǎn)品型號(hào)

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

N溝道

AP5N50BD

TO-252-3L

-55 to 150 ℃

是

不間斷電源、功率因數(shù)校正（PFC）

AP5N50BD

示意圖

Sketch Map

resource/images/98aa013f62674404842ce3144b41a64c_2.jpg

產(chǎn)品特性

Product characteristics

VDS = 500V ID =5A

RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω）

應(yīng)用范圍

Scope of application

: 車充

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: 打火機(jī)

: 剃須刀

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Company advantage

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原裝現(xiàn)貨，技術(shù)選型

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云倉(cāng)現(xiàn)貨，快速配送

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