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阿里巴巴

原裝現(xiàn)貨 廠家代理電源芯片、MOS、PD協(xié)議快充硬件開(kāi)發(fā)服務(wù)商

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FDC6327C封裝SSOT-6安森美P溝道場(chǎng)效應(yīng)管MOS管

FDC6327C封裝SSOT-6安森美P溝道場(chǎng)效應(yīng)管MOS管

FDC6327C封裝SSOT-6安森美P溝道場(chǎng)效應(yīng)管MOS管

FDC6327C封裝SSOT-6安森美P溝道場(chǎng)效應(yīng)管MOS管

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
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服務(wù)熱線:0755- 83387360?

通盛 產(chǎn)品介紹

Product index

These N & P-Channel 2.5V specified MOSFETs areproduced using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintain lowgatecharge for superior switching performance. These devices have been designed to offerexceptional powerdissipation in a very small footprint for applications wherethe bigger more expensive SO-8 andTSSOP-8 packagesare impractical.

通盛 訂購(gòu)信息

ordering information
器件類目

產(chǎn)品型號(hào)

封裝

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用 絲 印
P溝道 FDC6327C

SSOT-6

-55~+150

DC/DC轉(zhuǎn)換器、負(fù)荷開(kāi)關(guān)、電動(dòng)機(jī)驅(qū)動(dòng)

3271

通盛示意圖

Sketch Map

resource/images/0482897255f74030b6b5b983a005d89b_2.jpg

通盛 產(chǎn)品特性

Product characteristics
Fast switching speed.
High performance trench technology for extremelyIOW RDS(ON'
SuperSOTi-6 package: small footprint (72% smallerthan SO-8); low profile (1mm thick). 
Low gate charge.
N-Channel 2.7A, 20V. R DS(on)= 0.08Ω @ VGS= 4.5V                                           RDS(on)= 0.12Ω @ VGS= 2.5V
P-Channel -1.6A,-20V.RDS(on)= 0.17Ω @ VGS= -4.5V                                           RDS(on) 0.25Ω @ VGS- -2.5V

通盛 應(yīng)用范圍

Scope of application

公司優(yōu)勢(shì)

Company advantage
正

原裝現(xiàn)貨,技術(shù)選型

快

云倉(cāng)現(xiàn)貨,快速配送

全

品類齊全,性能優(yōu)良

省

工廠直銷,樣品申請(qǐng)

技術(shù)團(tuán)隊(duì)

Technical team

技術(shù)團(tuán)隊(duì)

通盛倉(cāng)庫(kù)

Tongsheng warehouse

通盛倉(cāng)庫(kù)

通盛 榮譽(yù)資質(zhì)

Honorary qualification

榮譽(yù)資質(zhì)

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contact us
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原裝現(xiàn)貨 廠家代理

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