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IRF8721TRPBF 封裝SO-8 infineon英飛凌功率MOSFET場效應(yīng)管

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產(chǎn)品介紹

Product index

The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.

訂購信息

ordering information

器件類目

產(chǎn)品型號

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

功率MOS

IRF8721TRPBF

SO-8

-55 to 150°C

是

筆記本CPU核心、高側(cè)開關(guān)

RP525G

示意圖

Sketch Map

resource/images/f8ce43f6a254447285127f0ee69ff7e8_12.jpg

產(chǎn)品特性

Product characteristics

Very Low Gate Charge
Low RDS(on) at 4.5V VGS

Low Gate Impedance
20V VGS Max. Gate Rating

應(yīng)用范圍

Scope of application

: UPS電源

: 手機充電器

: 電源適配器

: 多端口墻壁充電器

公司優(yōu)勢

Company advantage

: 正

原裝現(xiàn)貨，技術(shù)選型

: 快

云倉現(xiàn)貨，快速配送

: 全

品類齊全，性能優(yōu)良

: 省

工廠直銷，樣品申請

技術(shù)團隊

Technical team

技術(shù)團隊

通盛倉庫

Tongsheng warehouse

通盛倉庫

榮譽資質(zhì)

Honorary qualification

榮譽資質(zhì)

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