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MBRS130LT3G 封裝SMB ON安森美肖特基二極管MOS管

Schottky Power Rectifier

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產(chǎn)品介紹

Product index

This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

訂購信息

ordering information

器件類目

產(chǎn)品型號

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

肖特基二極管

MBRS130LT3G

SMB

?65~+125 °C

是

筆記本CPU核心、高側(cè)開關(guān)

P25

示意圖

Sketch Map

resource/images/20fff1f873454f3cb7e1b9389dd8d33f_10.jpg

產(chǎn)品特性

Product characteristics

Highly Stable Oxide Passivated Junction
Small Compact Surface Mountable Package with J?Bend Leads

These are Pb?Free Devices
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)

應(yīng)用范圍

Scope of application

: UPS電源

: 手機充電器

: 電源適配器

: 多端口墻壁充電器

公司優(yōu)勢

Company advantage

: 正

原裝現(xiàn)貨，技術(shù)選型

: 快

云倉現(xiàn)貨，快速配送

: 全

品類齊全，性能優(yōu)良

: 省

工廠直銷，樣品申請

技術(shù)團隊

Technical team

技術(shù)團隊

通盛倉庫

Tongsheng warehouse

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榮譽資質(zhì)

Honorary qualification

榮譽資質(zhì)

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contact us

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