熱搜關(guān)鍵詞: 電池芯片 MOSFET PD協(xié)議芯片 LED移動照明
產(chǎn)品介紹ProductidexNS10N65K,theilicoN-chaelEhacedVDMOSFET,iotaiedytheelf-aligedlaarTechologywhichreducethecoductiolo,imrovewitchigerformaceadehacetheavalacheeergy.Thetraitorcaeuedivariouowerwitchigcircuitforytemmiiaturizatioadhigherefficiecy.TheackageformiTO-252,whichaccordwiththeRoHStadard.訂......
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NS10N65K, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
器件類目 |
產(chǎn)品型號 |
封裝描述 |
環(huán)境溫度 |
是否在產(chǎn) |
應(yīng) 用 | 絲 印 |
N溝道 | NS10N65K |
TO252 |
–55~150 ℃ |
是 |
適配器和充電器的電源開關(guān)電路
|
NS10N65K |
原裝現(xiàn)貨,技術(shù)選型
云倉現(xiàn)貨,快速配送
品類齊全,性能優(yōu)良
工廠直銷,樣品申請