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PAN3080L TO-252-2L派思迪N溝道場(chǎng)效應(yīng)管MOS管

30V N-channel enhancement modeMOSFET

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產(chǎn)品介紹

Product index

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3080L is packaged in TO-252-2L package.

訂購信息

ordering information

器件類目

產(chǎn)品型號(hào)

封裝描述

環(huán)境溫度

是否在產(chǎn)

應(yīng) 用

絲印

N溝道

PAN3080L

TO252-2L

-55~+175

是

多電池保護(hù)、電池供電系統(tǒng)、UPS、便攜式電力設(shè)備

PAN3080

測(cè)試電路

Test Circuit

resource/images/d276e6d6a1d54f4f9a3f87adfb07408e_30.jpg

產(chǎn)品特性

Product characteristics

ID (max)=80A
Good stability and uniformity
Excellent package for good heat dissipation

VDS(max) =30V
100% avalanche tested
Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A

應(yīng)用范圍

Scope of application

: UPS電源

: 手機(jī)充電器

: 電源適配器

: 多端口墻壁充電器

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Company advantage

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