熱搜關(guān)鍵詞: 電池芯片 MOSFET PD協(xié)議芯片 LED移動照明
The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
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The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
器件類目 | 產(chǎn)品型號 | 封裝描述 | 包裝數(shù) | 是否在產(chǎn) | 應(yīng)用 | 絲印 |
P溝道增強(qiáng)型MOSFET | YXD2301BNE1 |
SOT-23 |
3000/盤 |
是 |
車充、滑板車等
|
2301B |
RDS(ON)(Typ.)=170m? @VGS=-2.5V
RDS(ON)(Typ.)=130m? @VGS=-4.5V
原裝現(xiàn)貨,技術(shù)選型
云倉現(xiàn)貨,快速配送
品類齊全,性能優(yōu)良
工廠直銷,樣品申請